Density of gap states in amorphous hydrogenated silicon carbide determined using high-frequency capacitance-voltage measurement technique

✍ Scribed by Chew, K; Rusli, ; Yu, M.B; Yoon, S.F; Ligatchev, V; Ahn, J

• Book ID: 122717590
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 129 KB
• Volume: 10
• Category: Article
• ISSN: 0925-9635
• DOI: 10.1016/S0925-9635(00)00362-9