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Demonstration of strong saturation of traps in multiple, narrow, slightly asymmetric coupled quantum wells

โœ Scribed by Ding, Y. J.; Guo, C. L.; Khurgin, J. B.; Law, K.-K.; Merz, J. L.


Book ID
115393499
Publisher
Optical Society of America
Year
1993
Tongue
English
Weight
436 KB
Volume
10
Category
Article
ISSN
0740-3224

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โœ Y.J. Ding; A.G. Cui; O. Gorbounova; J.V.D. Veliadis; S.J. Lee; J.B. Khurgin; K.L ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 84 KB

We report the observation of relative saturation among excitonic emission peaks at different sets of interface islands in growth-interrupted asymmetric-coupled quantum well GaAs/Al 0.2 Ga 0.8 As structures. The saturation is due to sequential filling of excitonic states at different sets of interfac