✦ LIBER ✦

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

✍ Scribed by S. Lee; P. Majhi; J. Oh; B. Sassman; C. Young; A. Bowonder; W. Loh; K. Choi; B. Cho; H. Lee; P. Kirsch; H. R. Harris; W. Tsai; S. Datta; H. Tseng; S. K. Banerjee; R. Jammy

Book ID: 126612672
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 577 KB
Volume: 29
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2002073

No coin nor oath required. For personal study only.

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (&#x226B; \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)

Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)