✦ LIBER ✦
Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gatep-MOSFET with Incorporated Fluorine
✍ Scribed by Y.W. Chen, C.M. Lai, L.W. Cheng, C.H. Hsu, C.W. Liang
- Book ID
- 113087313
- Publisher
- Springer US
- Year
- 2012
- Tongue
- English
- Weight
- 456 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0361-5235
No coin nor oath required. For personal study only.