Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress

✍ Scribed by Choi, Shinhyuk; Lee, Jae-Gil; Cha, Ho-Young; Kim, Hyungtak

• Book ID: 125416430
• Publisher: The Korean Physical Society
• Year: 2013
• Tongue: English
• Weight: 413 KB
• Volume: 63
• Category: Article
• ISSN: 0374-4884
• DOI: 10.3938/jkps.63.1208