Deformation effects on electronic structures of bilayer graphenes

✍ Scribed by S.H. Lee; C.W. Chiu; M.F. Lin

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 331 KB
• Volume: 42
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2009.11.148

✦ Synopsis

The deformation effects on the electronic properties of AA-and AB-stacked bilayer graphenes are explored through the tight-binding model. The mechanical deformation of graphene lattices is based on the elasticity theory. Electronic properties are dependent on the existence of uniaxial stress, interlayer interactions, and the stacking sequence. Uniaxial stress drastically changes energy dispersions, bandedge states, state degeneracies, and density of states ðDðoÞÞ. The interlayer interactions induce two pairs of band structures and double the number of the special structures in DðoÞ. Each prominent peak at the middle energy splits into two separate peaks in the presence of uniaxial stress. Analysis of the stacking sequence shows some important differences between AA-and AB-bilayer graphenes, such as the relationship between uniaxial stress and the low-energy DðoÞ, and zero-gap semimetal-semiconductor transition. The calculated results could be verified by experimental measurements.