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Defects induced in pure and doped LiNbO 3 by irradiation and thermal reduction

✍ Scribed by Arizmendi, L; Cabrera, J M; Agullo-Lopez, F


Book ID
123621756
Publisher
Institute of Physics
Year
1984
Tongue
English
Weight
868 KB
Volume
17
Category
Article
ISSN
0022-3719

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From the temperature dependence of the hole concentration in lightly Al-doped 4H-SiC epilayers, a shallow acceptor with E V þ 0:2 eV, which is an Al atom ðAl Si Þ at a Si sublattice site, and an unknown deep defect with E V þ 0:35 eV are found, where E V is the valence band maximum. In unirradiated