Defects induced by one-MeV proton irradiation in gallium arsenide using transient capacitance methods: Sheng, S. Li, D.W. Schoenfeld, F. Llevada, K.L. Wang Department of Electrical Engineering University of Florida, Gainesville, FL 32611, U.S.A.

• Book ID: 107856364
• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 110 KB
• Volume: 21
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(78)90255-1