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Defects in ion implanted diamond films (ESR study)

✍ Scribed by Yoshiyuki Show; Tomio Izumi; Masahiro Deguchi; Makoto Kitabatake; Takashi Hirao; Yusuke Morid; Akimitsu Hatta; Toshimichi Ito; Akio Hiraki


Book ID
114168766
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
359 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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Cold Implantation and Rapid Annealing (CIRA) at 1050 C of P in IIa diamond crystal, then further annealing at 1400 C were performed. EPR signals were obtained in particular (i) around g 2.003, from ``dangling bondΒΊ defects whose total concentration increases with the dose and decreases after anneali