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Defects in dilute nitrides: significance and experimental signatures

✍ Scribed by Chen, W.M.; Buyanova, I.A.; Tu, C.W.


Book ID
114456124
Publisher
The Institution of Electrical Engineers
Year
2004
Tongue
English
Weight
289 KB
Volume
151
Category
Article
ISSN
1350-2433

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A review of the selected results concerning the role of hydrostatic pressure in studies of impurity and defect centers in IIIΒ±V nitrides, and in InGaAsN with small amount of N is presented. Firstly, the shallow to deep impurity state transition for basic donors, i.e. Si and O in GaN and AlGaN and th