Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperatures

✍ Scribed by J.M Glasko; R.G Elliman; J Zou; D.J.H Cockayne; J.D.Fitz Gerald

• Book ID: 114170828
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 303 KB
• Volume: 148
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(98)00887-8