Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores

✍ Scribed by Texier, M.; Lancin, M.; Regula, G.; Pichaud, B.

• Book ID: 115481969
• Publisher: Taylor and Francis Group
• Year: 2009
• Tongue: English
• Weight: 887 KB
• Volume: 89
• Category: Article
• ISSN: 1478-6435
• DOI: 10.1080/14786430902919497