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Defects and transport in a-Si:H/c-Si heterojunctions

✍ Scribed by T Unold; M Rösch; G.H Bauer

Book ID
117150426
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
126 KB
Volume
266-269
Category
Article
ISSN
0022-3093

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## Abstract In order to elucidate the transport mechanism in a‐Si:H/c‐Si heterojunction solar cells under high forward bias (__U__ > 0.5 V), we conducted temperature‐dependent measurements of current–voltage (__I__–__V__) curves in the dark and under illumination. ZnO:Al/(p)a‐Si:H/(__n__)c‐Si/(n^+^