Defects and electrical properties of doped and undoped CdTe single crystals from tellurium-rich solutions

✍ Scribed by E. Weigel; G. Müller-Vogt; B. Steinbach; W. Wendl; W. Stadler; D.M. Hofmann; B.K. Meyer

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 448 KB
• Volume: 16
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90006-9

✦ Synopsis

CdTe single crystals have been grown using either the Bridgman or the travelling-heater technique. Crystals doped with indium or chlorine were compared with those without any intentional dopant. With high resolution atomic absorption spectroscopy analysis it was possible to measure the effective segregation coefficient of indium down to concentrations of 3 x 10 is In atoms cm -3. Higher amounts of indium resulted in n-type conductivity but, with less indium than 1 x 10 is cm-3, crystals were p type, as is always the case for undoped crystals. Photoluminescence spectra taken from as-grown samples and from samples annealed at 380 *C or 780 °C with subsequent quenching revealed the A centre but require reconsideration of the role of this complex in the compensation models.