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Defect studies in electron-irradiated ZnO and GaN

โœ Scribed by F. Tuomisto; D.C. Look; G.C. Farlow


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
170 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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๐Ÿ“œ SIMILAR VOLUMES


Defect production in neutron irradiated
โœ J.G. Marques; K. Lorenz; N. Franco; E. Alves ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 160 KB

Rutherford backscattering in the channelling mode (RBS/C) and high resolution X-ray diffraction (XRD) were used to characterize GaN films after irradiation with fast and thermal neutrons to fluences of 1.0 โ€ข 10 19 n/cm 2 and 4.8 โ€ข 10 19 n/cm 2 , respectively. RBS/C experiments indicate that Ga atoms