Defect structure characteristics in near-stoichiometric In:LiNbO3 single crystals grown by K2O-flux method

✍ Scribed by Shuangquan Fang; Zhaoxiang Han; Yingjie Qiao; Yingying Liu; Qi Jia

• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 112 KB
• Volume: 44
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200900307

✦ Synopsis

Abstract

With K~2~O as flux, near‐stoichiometric In:LiNbO~3~ (In:SLN) crystals with different indium contents were grown by the top seed solution growth (TSSG) method. Defect structure characteristics and the replacement principle of extrinsic ions were derived from X‐ray powder diffraction, differential thermal analysis (DTA), ultraviolet‐visible (UV) absorption and infrared (IR) spectrum measurement. Further analysis indicated that the threshold concentration of In~2~O~3~ in near‐stoichiometric LiNbO~3~ crystals were about 1.1 mol%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)