✦ LIBER ✦
Defect-related emission in CdS films grown directly on hydrogen-terminated Si(111) substrates
✍ Scribed by S. Seto; T. Kuroda; K. Suzuki
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 163 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1862-6351
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✦ Synopsis
Abstract
Defect‐related emission at 2.451 eV in epitaxial CdS films on Si(111) substrates was observed for the first time in low‐temperatures photoluminescence spectra. Temperature and excitation intensity dependence of the defect‐related emission were measured to examine its emission mechanism. It was shown that this defect‐related emission in CdS hetero‐epitaxial films exhibits similar behaviours to the so‐called “Y‐line” observed in other zincblende structure II‐VI semiconductor films such as ZnSe/GaAs or ZnTe/GaAs heteroepitaxial films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)