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Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template

✍ Scribed by Wuu, D. S.; Wang, W. K.; Wen, K. S.; Huang, S. C.; Lin, S. H.; Huang, S. Y.; Lin, C. F.; Horng, R. H.


Book ID
126491382
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
700 KB
Volume
89
Category
Article
ISSN
0003-6951

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