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Defect production in silicon implanted with 13.6 MeV boron ions

✍ Scribed by V.S. Varichenko; A.M. Zaitsev; A.A. Melnikov; W.R. Fahrner; N.M. Kasytchits; N.M. Penina; D.P. Erchak

No coin nor oath required. For personal study only.

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