𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Defect formation mechanism during plasma enhanced chemical vapor deposition of undoped a-Si:H

✍ Scribed by Keiji Maeda; Ikurou Umezu

Book ID
117148975
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
106 KB
Volume
227-230
Category
Article
ISSN
0022-3093

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Microstructural modification of nc-Si/Si
Microstructural modification of nc-Si/SiOxfilms during plasma-enhanced chemical vapor deposition
✍ Zhang, X. W. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 133 KB

## Abstract Nanocrystalline‐silicon embedded silicon oxide films are prepared by plasma‐enhanced chemical vapor deposition (PECVD) at 300 Β°C without post‐heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film depos