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Defect formation in epitaxial GaP junctions under heat treatment

✍ Scribed by S. V. Boulyrskii; N. S. Groushko; D. V. Kazakov

Publisher
Springer
Year
2005
Tongue
English
Weight
121 KB
Volume
34
Category
Article
ISSN
1063-7397

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## Abstract The mechanism of the recrystallization in epitaxial (0001) GaN film, introduced by the indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by micro‐Raman area mapping. β€˜Pop‐in’ bursts in loading lines indicate nuc