Defect evolution of nanocrystalline SnO2 thin films induced by pulsed delivery during in situ annealing
✍ Scribed by Z.W. Chen; H.J. Zhang; Z. Li; Z. Jiao; M.H. Wu; C.H. Shek; C.M.L. Wu; J.K.L. Lai
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 516 KB
- Volume
- 57
- Category
- Article
- ISSN
- 1359-6454
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✦ Synopsis
The microstructural defects of nanocrystalline SnO 2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO 2 thin films could be significantly reduced by in situ annealing SnO 2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that the stacking faults and twins were annihilated upon in situ annealing. In particular, the inside of the SnO 2 nanoparticles demonstrated perfect lattices free of defects after in situ annealing. Raman spectra also confirmed that the in situ annealed specimen was almost defect-free. By using in situ annealing, defect-free nanocrystalline SnO 2 thin films can be prepared in a simple and practical way, which holds the promise for applications as transparent electrodes and solid-state gas sensors.