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Defect development and dopant location due to elevated temperature implantation of InP with MeV zinc ions

✍ Scribed by H. Krause; R.-H. Flagmeyer; J. Vogt; A. Kling; T. Butz


Book ID
113287351
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
480 KB
Volume
113
Category
Article
ISSN
0168-583X

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