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Defect creation and hydrogen evolution in amorphous Si:H

✍ Scribed by D.K Biegelsen; R.A Street; C.C Tsai; J.C Knights

Book ID
118331426
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
518 KB
Volume
35-36
Category
Article
ISSN
0022-3093

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Recombination processes and light-induce
Recombination processes and light-induced defect creation in hydrogenated amorphous silicon
✍ Morigaki, K. πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 188 KB

## Abstract Recombination processes of electrons and holes in hydrogenated amorphous silison (a‐Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light‐induced electron spin resonance (LESR) are compared, and it is concluded that radi