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Defect-activated first order Raman scattering in boron implanted GaAs

✍ Scribed by S. Ushioda

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 404 KB
Volume: 15
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(74)90729-7

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📜 SIMILAR VOLUMES

Resonant Raman scattering in GaAlAs : Fi

Resonant Raman scattering in GaAlAs : First order active and disorder activated phonon lines. Theory of the IR dielectric susceptibility.

✍ B. Jusserand; R. Bonneville 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 197 KB