Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (211) and (311) oriented GaAs substrates

✍ Scribed by Boumaraf, R.; Sengouga, N.; Mari, R.H.; Meftah, Af.; Aziz, M.; Jameel, Dler; Al Saqri, Noor; Taylor, D.; Henini, M.

• Book ID: 121407895
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 631 KB
• Volume: 65
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/j.spmi.2013.11.019