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Deep levels in semi-insulating liquid encapsulated Czochralski-grown GaAs

โœ Scribed by M.R. Burd; R. Braunstein


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
453 KB
Volume
49
Category
Article
ISSN
0022-3697

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In the past it has been demonstrated that the carbon concentration of large semi-insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the prese