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Deep levels and electron transport in AlGaN/GaN heterostructures

✍ Scribed by I. V. Antonova; V. I. Polyakov; A. I. Rukavishnikov; V. G. Mansurov; K. S. Zhuravlev


Book ID
111443943
Publisher
Springer
Year
2008
Tongue
English
Weight
249 KB
Volume
42
Category
Article
ISSN
1063-7826

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In this work we investigate AlGaN/GaN HEMTs structures grown by metalorganic chemical-vapor deposition on SiC substrates. They consist of a 22 nm thick undoped AlGaN barrier with Al mole fraction x ΒΌ 0.24 on top of a 1.7 mm unintentionally doped GaN buffer layer. Structures with large gate are analy