Deep-level luminescence at 1.93 eV in GaN prepared by ammonothermal growth

✍ Scribed by Fujii, Katsushi ;Fujimoto, Gakuyo ;Goto, Takenari ;Yao, Takafumi ;Hoshino, Naruhiro ;Kagamitani, Yuji ;Ehrentraut, Dirk ;Fukuda, Tsuguo

• Book ID: 105364468
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 188 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723188

✦ Synopsis

Abstract

Deep‐level luminescence at 1.93 eV (red luminescence) was observed from GaN grown by the acidic ammonothermal method. Typical deep emission at 2.2 eV (yellow luminescence) was not observed. The intensity decreased linearly with increasing temperature, which is different from the red and yellow luminescence reported thus far. The time decay of the luminescence appeared partially exponential, i.e. with the both possibilities of a simple two‐level transition and donor–acceptor pairs. The origin of the red luminescence is probably different from the previously reported one [J. Appl. Phys. 97, 061301 (2005)]. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)