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Deep level defects and reverse leakage current of B F2+-implanted shallow p+ n junctions after rapid thermal annealing

✍ Scribed by T.Q. Zhang; J.L. Liu; Z.Y. Zhou


Book ID
113281985
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
353 KB
Volume
59-60
Category
Article
ISSN
0168-583X

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