✦ LIBER ✦
Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs: M. Q. Huang, P. T. Lai, Z. J. Ma, H. Wong and Y. C. Cheng. Solid-State Electronics, 36(8), 1155 (1993)
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 111 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0026-2714
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