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Debye temperature of polycrystalline silicon

โœ Scribed by Voland, U. ;Deus, P. ;Schneider, H. A.

Book ID
105371716
Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
198 KB
Volume
36
Category
Article
ISSN
0031-8965

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๐Ÿ“œ SIMILAR VOLUMES

Temperature dependence of carrier transp
Temperature dependence of carrier transport in polycrystalline silicon
โœ J.Y. Lee; F.Y. Wang ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 512 KB

The carrier transport in polycrystalline silicon was studied over a wide temperature range, from 20K to 300K, and for a number of dopant concentrations ranging from 1.3 x 1018/cm 3 to 2.6 x 101S/cm 3. A grain boundary carrier trapping model was used to explain the experimental results in this work.