DC current and AC impedance measurements on boron-doped single crystalline diamond films

Cathodoluminescence measurements on heav

Cathodoluminescence measurements on heavily boron doped homoepitaxial diamond films and their interfaces with their Ib substrates

✍ Baron, C. ;Deneuville, A. ;Wade, M. ;Jomard, F. ;Chevallier, J. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 233 KB

## Abstract Heavily boron doped 1.8 to 2.4 µm thick homoepitaxial diamond films with 1.5 × 10^21^ cm^–3^ ≤ [B] ≤ 1.75 × 10^21^ cm^–3^ have been deposited directly on their (100) Ib substrates at 830 °C. Their cathodoluminescence spectra probe the controlled thicknesses from 0.28 to 2.8 µm, therefor