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DC capacitor simulation by the boundary element method

✍ Scribed by Kirkup, Stephen

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 178 KB
Volume: 23
Category: Article
ISSN: 1069-8299
DOI: 10.1002/cnm.929

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✦ Synopsis

Abstract

When the direct current (DC) metallized thin film capacitor is fully charged the electromagnetic fields can be considered to have reached a steady state in which the governing equation is Laplace's equation. It is the computational analysis of the electrostatic state that is considered in this paper.

The capacitor is modelled as a stack made up of infinitesimally thin layers of metal on polymer. An integral equation method from the BEMLAP package (www.boundary‐element‐method.com (Introduction to the Boundary Element Method for Scientists and Engineers: The BEMLAP Fortran Library for Laplace Problems)) for modelling the electric field, based on the methods described in Kirkup (Fortran codes for computing the discrete Helmholtz integral operators; Adv. Comput. Math. 1998; 9:391–409). The method is applied to a typical capacitor structure and encouraging results are obtained. Copyright © 2006 John Wiley & Sons, Ltd.

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