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Dark properties and transient current response of Si0.95Ge0.05 n+p devices

✍ Scribed by Arie Ruzin; S. Marunko; N.V. Abrosimov; H. Riemann


Book ID
103852680
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
173 KB
Volume
518
Category
Article
ISSN
0168-9002

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✍ Marjeta Macek Krzmanc; BoΕ‘tjan Jančar; Danilo Suvorov πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 522 KB

The feldspars Sr 0.05 Ba 0.95 Al 2 Si 2 O 8 , BaAl 2 Ge 2 O 8 and BaGa 2 Si 2 O 8 with S.G. I2/c, and BaGa 2 Ge 2 O 8 with S.G. P2 1 /a, were studied by means of crystal structural and microstructural analyses and dielectric measurements. All the investigated densely sintered single-phase feldspars