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Dark-current analysis of InGaAs-MSM-photodetectors on silicon substrates

✍ Scribed by Wehmann, H.-H.; Guang-Ping Tang; Klockenbrink, R.; Schlachetzki, A.

Book ID
114536583
Publisher
IEEE
Year
1996
Tongue
English
Weight
641 KB
Volume
43
Category
Article
ISSN
0018-9383

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Effect of AlN film thickness on photo/da
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✍ Ru-Yuan Yang; Chin-Min Hsiung; Hsuan-Hsu Chen; Hung-Wei Wu; Ming-Chang Shih πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 378 KB

## Abstract In this article, we have successfully fabricated the metal‐semi‐conductor‐metal (MSM) UV photodetector using the aluminum nitride‐based (AlN) film as an active layer grown on p‐type Si (100) by a dc sputtering deposition. Effect of AlN thickness of 500, 1500, and 2500 nm on the surface