Thermal and mechanical damage of GaAs in
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Amit Pratap Singh; Avinashi Kapoor; K.N. Tripathi; G. Rvindra Kumar
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Article
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2001
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Elsevier Science
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English
β 834 KB
An in-depth study of the single pulse and multiple pulse laser (35 ps; 10 Hz and 1064 nm) damage for threshold uence and greater uence of GaAs 1 0 0 single crystal is presented. Damage which starts at a power 2Γ10 11 W=cm 2 in the form of pits occurs due to accumulation of laser induced microscopic