CW photoluminescence determination of the capture cross-section of self-assembled InAs quantum dots
β Scribed by J.M.R. Cruz; F.V. de Sales; S.W. da Silva; M.A.G. Soler; P.C. Morais; M.J. da Silva; A.A. Quivy; J.R. Leite
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 73 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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The e ects of desorption and di usion of indium adatoms on the photoluminescence (PL) from InAs self-assembled quantum dots (QDs) are investigated by introducing growth interruptions after QD formation. Large, low-density and small, high-density QDs were grown by molecular beam epitaxy using low (0:
## Abstract We report the effect of defects that appear during capping layer growth or are introduced intentionally, on the photoluminescence (PL) properties of InAs strained quantum dots. A treatment of the samples with CCl~4~ during the growth leads to the reduction of native defect concentration
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum