CVD of Titanium Oxide Thin Films from the Reaction of Tetrakis(dimethylamido)- titanium with Oxygen

✍ Scribed by J. B. Woods; D. B. Beach; C. L. Nygren; Z.-L. Xue

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 235 KB
• Volume: 11
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.200504205

✦ Synopsis

TiO~2~ thin films on silicon wafers have been prepared from the reaction of Ti(NMe~2~)~4~ with O~2~ at 250–300 °C by CVD processes. These films, which are carbon free and contain no TiN or TiO~x~N~y~ species, are amorphous before annealing but crystalline anatase after annealing at 600 °C in air. The average dielectric constant (κ) of the annealed films is 50(5), with an average leakage current of 5(3)×10^–5^ A cm^–2^, and breakdown strength of 1.8(0.3) MV cm^–1^.