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Current-voltage characteristic and parameters of the current filament region of an amorphous gallium telluride-crystalline silicon barrier negistor structure

✍ Scribed by A. Čhesnys; S. -A. Karpinskas; A. Urbelis


Book ID
110132658
Publisher
Springer
Year
2002
Tongue
English
Weight
67 KB
Volume
47
Category
Article
ISSN
1063-7842

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