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Current-induced domain-wall switching in a ferromagnetic semiconductor structure

โœ Scribed by Yamanouchi, M.; Chiba, D.; Matsukura, F.; Ohno, H.

Book ID
109892810
Publisher
Nature Publishing Group
Year
2004
Tongue
English
Weight
451 KB
Volume
428
Category
Article
ISSN
0028-0836

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๐Ÿ“œ SIMILAR VOLUMES

A constrained theory on actuation strain
A constrained theory on actuation strain in ferromagnetic shape memory alloys induced by domain switching
โœ Y.F. Ma; J.Y. Li ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 206 KB

A constrained theory of magnetoelastic materials is applied to study the ferromagnetic shape memory effect in single crystals and polycrystals. The actuation strain induced by domain switching is established first for ferromagnetic shape memory single crystals, from which the strain in polycrystals