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Cu-CVD process optimised in a cluster equipment for IC manufacturing

✍ Scribed by C. Marcadal; E. Richard; J.L. Mermet; J. Torres; J. Palleau; B. Alaux; M. Bakli


Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
495 KB
Volume
33
Category
Article
ISSN
0167-9317

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✦ Synopsis


A complete optimisation of the copper CVD deposition was achieved with a bubbler delivery system. However the deposition rate was found to be limited to 30 nm/min. With a DLI delivery system, a major improvement of the deposition rate 100 nm/min was achieved at high Cupraselect® flow rate with a void free deposition. The nucleation delay, the deposition rate and the reproducibility were dramatically improved by water vapour addition. From the experimental results, an explanation has been proposed for this effect.