Cu 2 SnS 3 absorber thin films prepared via successive ionic layer adsorption and reaction method

✍ Scribed by Kahraman, Süleyman; Çetinkaya, Samed; Çakmak, Hacı Mustafa; Çetinkara, Hacı Ali; Güder, Hüsnü Salih

• Book ID: 121867169
• Publisher: Carl Hanser Verlag
• Year: 2013
• Tongue: English
• Weight: 575 KB
• Volume: 104
• Category: Article
• ISSN: 1862-5282
• DOI: 10.3139/146.110957

✦ Synopsis

Abstract

In this paper, we report the production of Cu~2~SnS~3~ thin films with high phase purity via successive ionic layer adsorption and reaction method on soda lime glass substrates. Structural, morphological, compositional, optical and electrical investigations were carried out. The X-ray diffraction patterns of the samples matched very well with the reference pattern and proved the polycrystalline nature of the films. As a secondary phase, one weak peak indicating covallite Cu~2–x~S phase was observed in the pattern of the sample deposited by using equimolar Cu and Sn. The surface morphologies of the films were found to be continuous and composed of homogeneously distributed large grains. From the reflectance and transmittance data, the optical absorption coefficient values of the films were found to be about 10^4^ cm^−1^ and the films were found to be almost opaque in the wavelengths from 200 to 600 nm with a small reflectivity of about 10%. Band gap values of the films decreased from 1.45 to 1.35 eV with decreasing Cu content. Electrical characterization showed that the films were p-type semiconductor. Two different impurity levels for each film were found via resistivity-temperature characteristics.