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Met. Chem. EntT. , x, 519.
)--At sufficiently high temperature in an oxidizing atmosphere crystolon decomposes to form SiO 2 and CO, or, in a neutral or reducing atmosphere, to form Si vapor and C in the form of the original crystals. Great care is required in mixing up the charge, viz., 60 SiO.~ and 36 C, for a slight excess of SiO2 in any part of the furnace results in the formation of Si. The working temperature range is about 400 ° , below which the reaction does not begin and above which the SiC is decomposed with a loss of Si, and, if the temperature becomes sufficiently high, the formation of graphite. The furnace, which takes about 700 kilowatts, starting at 2I 5 volts and ending with 9000 ampfires at 80 volts, and a power factor of 0. 9, is built up with the charge surrounding a horizontal core of granular coke resistor.
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epitaxy of this material in many aspects of homoepitaxy and heteroepitaxy.