Crystallization of sputtered amorphous silicon induced by silver–copper alloy with high crystalline volumeratio
✍ Scribed by Yong Zhao; Jian Wang; Qiang Hu; Dejie Li
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 894 KB
- Volume
- 312
- Category
- Article
- ISSN
- 0022-0248
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✦ Synopsis
Silver-copper alloy-induced crystallization of sputtered a-Si has been studied. In this alloy, Cu acts as a catalyst to accelerate the crystallization, while Ag acts as a new kind of buffer layer, different from Al 2 O 3 and Si 3 N 4 , to obtain well-crystallized poly-Si films with short annealing time and free of post-treatment for ohmic contact. When the Cu content is limited to below 30%, Ag can effectively slow down the diffusion of Cu into Si and decrease the Cu-silicide nuclei density to improve the crystalline volume ratio from 80% to over 90%. A 1:4 ratio of Cu to Ag yields the best result. The crystalline volume ratio and Hall mobility reach nearly 100% and 29.4 cm 2 /V s, respectively. This high quality poly-Si film demonstrates a promising application in solar cells.