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Crystallization of amorphous GexSi1−x films on SiO2

✍ Scribed by F. Edelman; Y. Komem; S.S. Iyer; J. Heydenreich; D. Baither

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 433 KB
Volume: 222
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(92)90038-d

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## Abstract Kinetics of isothermal crystallization has been studied in the temperature range from 375 to 525°C. The kinetic curves are obtained and the rate of isothermal transformation of amorphous films into crystalline ones has been determined. Using experimentally determined kinetic curves the