Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture
✍ Scribed by Lim, S. F.; Wee, A. T. S.; Lin, J.; Chua, D. H. C.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 432 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Carbon nitride films have been deposited on Si(100) substrates by r.f. plasma-enhanced chemical vapour deposition (r.f.-PECVD) using an ethylene-ammonia-hydrogen (C 2 H 4 -NH 3 -H 2 ) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp 3 fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The DRIFT data revealed that, after RTA ,C N,C O and C N bonds were reduced but C-N, diamond C-C and N-C O bonds were formed. The XRD data show growth of crystalline carbon nitride as well as amorphous SiC. The XPS data indicate that the sp 3 fraction on the film surface is maximum at 100 sccm hydrogen flow rate. The AFM data show carbon nitride growth in clusters of sizes 60-70 nm. The DRIFT and XPS data were correlated.