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Crystal Structures and Electrical and Optical Properties of MgIn2−xGaxO4Solid Solutions

✍ Scribed by Toshihiro Moriga; Takashi Sakamoto; Yoshiki Sato; Azrul Hisham Khalid @ Haris; Ryoichi Suenari; Ichiro Nakabayashi

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
283 KB
Volume
142
Category
Article
ISSN
0022-4596

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✦ Synopsis

Equilibrium phase relationships in the MgIn 2 O 4 -MgGa 2 O 4 system at 1400°°C were determined by X-ray diffraction. Single phases of the inverse-spinel-type MgIn 2 O 4 , the layered MgIn-GaO 4 , and the inverse-spinel-type MgGa 2 O 4 were observed in a compositional range of 04 4x4 40.35, 0.84 4x4 41.0, and 1.54 4x4 42.0 in MgIn 2-x Ga x O 4 , respectively. Rietveld structural refinement revealed that the layered MgInGaO 4 (space group R3 m, a ‫؍‬ 3.3060(4), c ‫؍‬ 25.832(3)A s s ) comprised a InO ؊ 2 single octahedral layer and a MgGaO ؉ 2 double trigonal-bipyramid layer alternatingly stacked along the z-axis. With increasing gallium content, room-temperature conductivity decreased, whereas transparency and optical band gap increased. Results of single-point energy calculation using the CASTEP code supported that MgIn 2 O 4 is a good conductor with a band gap of & &3.5 eV and that MgGa 2 O 4 is a poor conductor with a band gap of & &5 eV.

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