Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

✍ Scribed by Jinfeng Kang; Xiaoyan Liu; Guijun Lian; Zhaohui Zhang; Guangcheng Xiong; Xudong Guan; Ruqi Han; Yangyuan Wang

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 146 KB
• Volume: 56
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00526-8

✦ Synopsis

Cerium oxide (CeO ) is the potential dielectric candidate for the Si-based devices due to its stable chemical properties, 2 high dielectric constant and good lattice match with silicon. In this paper, the impacts of process conditions on the structural and electrical characteristics of CeO thin films deposited on Si(100) substrates have been studied. Epitaxial CeO thin films 2 2 with different crystal orientations on Si(100) substrates have been grown by pulsed laser deposition (PLD). The structural and electrical characteristics of CeO thin films have been characterized by x-ray diffraction (XRD), atomic force 2 microscopy (AFM), and high frequency capacitance-voltage measurements (C-V).