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Crystal growth of the intermetallic compound Nd2PdSi3

✍ Scribed by Y. Xu; W. Löser; F. Tang; C. G. F. Blum; L. Liu; B. Büchner

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
255 KB
Volume
46
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

Nd~2~PdSi~3~ single crystals were grown by a vertical floating zone method with radiation heating at a zone traveling rate of 3 mm/h. The compound exhibits congruent melting behavior at a liquidus temperature of about 1790 °C. The actual crystal composition (35.3 ± 0.5) at.% Nd, (16.2 ± 0.5) at.% Pd, and (48.5 ± 0.5) at.% Si is slightly depleted in Pd and Si with respect to the nominal stoichiometry. Therefore, the gradual accumulation of these elements in the traveling zone led to a decrease of the operating temperature during the growth process. Single crystalline samples exhibit a large anisotropy due to the crystal electric field effect and order ferromagnetically below the Curie temperature T~C~ = 15.1 K. The [001] orientation was identified as the magnetic easy axis at low temperatures. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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